法国专利FR3052603A1 LASER DEVICE AND METHOD FOR MANUFACTURING SAME

专利PDF首页>>法国专利

专利附录

专利说明

权利要求

类似技术

同族专利

引用文献

法律状态

优先权

专利摘要:
A technique is provided which is suitable for joining an end surface of a laser medium (8) to a transparent heat sink (2) to keep the thermal resistance low between them and to avoid the action of a strong thermal stress on the laser medium (8). An end coating (6) is disposed on the end surface of the laser medium (8), a layer of the same material (4), made of the same material as the heat sink (2), is disposed on a surface of the end coating (6), a surface of the layer of the same material (4) and an end surface of the heat sink (2) are activated in a substantially vacuum environment, and these activated surfaces are bonded in the environment substantially under vacuum. A laser device having a low thermal resistance between the laser medium (8) and the heat sink (2) and a high transparency at the junction interface between them, and without strong thermal stress acting on the laser medium ( 8), is thus obtained.
公开号:FR3052603A1
申请号:FR1755178
申请日:2017-06-09
公开日:2017-12-15
发明作者:Takunori Taira；Arvydas Kausas；Lihe Zheng；Vincent Yahia；Ryo Yasuhara
申请人:Inter University Research Institute Corp National Institute of Natural Sciences；
IPC主号:

专利说明:

TECHNICAL AREA
The present disclosure discloses a laser device (comprising a laser oscillator and a laser amplifier) using a solid state laser medium (or amplifying medium), and a method for its manufacture.
BACKGROUND OF THE TECHNIQUE
[0002] A solid material is known which emits light when an excitation beam enters it. For example, a solid material with dopants based on rare earth elements, such as Nd: YAG, Yb: YAG, Nd: YV04, Yb: YV04, Nd: (s-) FAP, Yb: (s-) FAP, emits a light when the excitation beam enters it. When such a solid material is installed in a laser oscillator, a laser beam is discharged from the laser oscillator. The present disclosure refers to a solid material capable of receiving an excitation beam and discharging a laser beam from a laser oscillator serving as a laser medium. In addition, there is also known a solid material which receives an excitation beam and an input beam to discharge a beam with an amplified power of the input beam. The present description also refers to this type of solid material serving as a laser medium.
[0003] A laser medium in operation generates heat, and therefore requires cooling. U.S. Patent No. 5,796,766 discloses a device having a function for cooling a laser medium. The technique of US Patent No. 5,796,766 shapes the laser medium into a disk, and transfers heat from the laser medium to a transparent heat sink which is also shaped into a disk. The present disclosure refers to a flat surface of the disk-shaped laser medium serving as the first end surface, and another flat surface thereof serving as the second end surface. The technique of US Patent No. 5,796,766 contacts a first disk-shaped heat sink with the first end surface of the disk-shaped laser medium, and also contacts a second disk-shaped heat sink with the second end surface of the disk-shaped laser medium for cooling the laser medium from the first and second end surfaces. SUMMARY [0004] US Patent No. 5,796,766 discloses various methods for contacting a laser medium and a heat sink, such as (1) a method of maintaining contact between these elements by a mechanical force (which is indicated by "optical contact" in US Patent No. 5,796,766), (2) a method of bonding the elements by means of an adhesive, (3) a method of fixing the elements with an epoxy resin, and [4] a method of bonding the elements by diffusion welding.
Studies by the inventors have revealed that the methods (1) to (3) can not sufficiently cool the laser medium because the thermal resistance is too high between the laser medium and the heat sink. That is, it has been revealed that the intensity of the laser beam that can be outputted from the laser medium can not be increased to a required level. The reason for this is that the method (1) has a contact surface deficit, and the adhesive and epoxy resin layers function as a thermal resistance in processes (2) and (3). According to method (4), although the thermal resistance between the laser medium and the heat sink can be reduced sufficiently, a high thermal stress is generated in the laser medium after bonding due to the high temperature used in diffusion bonding and the difference in the thermal expansion coefficients of the laser medium and the heat sink, which reduces the light-emitting performance of the laser medium, and thus alters the optical properties of the light emitted to something that was not intended.
The present disclosure discloses a technique that puts into practice a laser device having a low thermal resistance between a laser medium and a heat sink, and in which a high thermal stress does not act on the laser medium after it has been attached with the heat sink.
[Method of manufacturing a laser device]
This method produces a laser device comprising a laser medium configured to emit light when an excitation beam enters it, and a heat sink having a thermal conductivity greater than that of the laser medium and configured to allow the excitation beam permeate therethrough (which means that the excitation beam passes through it while retaining its intensity, the same applies hereinafter), the laser device having an end surface of the laser medium which is attached to an end surface of the heat sink. This method comprises: forming a reflectance property adjustment coating (hereinafter referred to as an end coat for simplicity of description) on the end surface of one of the laser medium and the heat sink; forming a layer of the same material on one surface of the end coating, the layer of the same material being made of the same material as the material of the other of the laser medium and the heat sink; activating a surface of the layer of the same material and the end surface of the other of the laser medium and the heat sink in a substantially vacuum environment; and joining the activated surface of the layer of the same material and the activated end surface of the other of the laser medium and the heat sink in the substantially vacuum environment.
By "activation", we refer here to a method of forming a newly formed surface comprising dangling bonds. For example, the term may refer to a method of forming the newly formed surface comprising the pendant bonds by irradiation of an ion beam or a neutral atom beam of Ar or the like on a sample surface in the environment substantially under vacuum, and removing oxygen or the like which has been absorbed by the surface. When the activated surfaces are joined in the environment substantially under vacuum, the bonding force is generated by mutual interatomic effects. The present description refers to the above process as a room temperature bonding. A "substantially vacuum environment" refers to an environment, as described above, having a degree of vacuum such that the newly formed surface can be formed by removing oxygen or other contaminating atoms on the surface, and the newly formed surface can be maintained.
In this method, the end coating may be formed on any one of the laser medium and the heat sink. If the end coating is formed on the end surface of the laser medium, the layer of the same material, made of the same material as that of the heat sink (hereinafter referred to as the heat sink-like layer for the sake of simplicity of the description), is formed on the surface of the end coating, the surface of the heat sink-like layer and the end surface of the heat sink are activated in the environment substantially under vacuum, and these activated surfaces are joined in i environment substantially under vacuum. As a result of this, a structure is obtained in which the laser medium, the end coating, the heat sink-like layer, and the heat sink are laminated, i.e. arranged on top of one another. If the end coating is formed on the end surface of the heat sink, the layer of the same material, made of the same material as that of the laser medium (hereinafter called the laser-like layer for the sake of simplicity of the description), is formed on the surface of the end coating, the surface of the laser-like layer and the end surface of the laser medium are activated in the environment substantially under vacuum, and these activated surfaces are joined in the environment substantially under vacuum. As a result of this, a structure is obtained in which the heat sink, the end coating, the laser-like layer and the laser medium are laminated, i.e. arranged on top of one another.
In the present description of the fact that "the end surface of the laser medium and the end surface of the heat sink are glued or joined", more specifically, this refers to the fact that the end surface the laser medium and the end surface of the heat sink are glued or joined via the end coating and the heat sink-like layer, or via the end coating and the laser-like layer.
(Laser device)
The present disclosure discloses a novel laser device structure that includes a laser medium configured to emit light when the excitation beam enters the laser medium, and a heat sink having a thermal conductivity greater than that of the laser medium, configured to enable to the excitation beam to permeate therethrough, and comprising an end surface joined to an end surface of the laser medium. This laser device comprises an end coating disposed between the heat sink and the laser medium, and a layer of the same material interposed between the end coating and one of the heat sink and the laser medium, the layer of the same material. being made of the same material as one of the heat sink and the laser medium, but having a different crystalline state. The laser device described herein includes laser oscillators and laser amplifiers.
This laser device has a structure in which the laser medium, the end coating, the heat sink-like layer and the heat sink are laminated, or a structure in which the heat sink, the end coating, the layer similar to the laser medium and the laser medium are laminated. These structures can be manufactured by a room temperature bonding process as mentioned above, but without limiting it. As layers with the same material must be glued, they can also be obtained by low temperature diffusion welding (in which case the thermal stress acting on the laser medium is suppressed).
In accordance with the foregoing, a laser device can be realized in which the thermal resistance between the laser medium and the heat sink can be kept low, and there is no high thermal stress acting on the laser medium that has been subjected to collage. It is possible to produce a laser device capable of emitting a high intensity laser beam, which was not emitted by a known device.
[Pulse Laser Device]
When the technique disclosed herein is applied to a pulse laser device, the following configuration is obtained. This laser device comprises a first heat sink, a laser medium, a saturable absorber, and a second heat sink, arranged in this order. A second end surface (the end surface of the laser middle side) of the first heat sink is joined to a first end surface (the end surface of the first heat sink side) of the laser medium, a second end surface (the end surface of the saturable absorber side) of the laser medium is joined to a first end surface (the end surface of the laser medium side) of the saturable absorber, and a second end surface (the end surface of the second heat sink side) of the saturable absorber is joined to a first end surface (the end surface of the saturable absorber side) of the second heat sink . The saturable absorber has an absorption capacity that is configured to be saturated when the intensity of the light entering from the laser medium increases, which functions as a switch Q. The first heat sink has a thermal conductivity greater than that of the laser medium and is configured to allow an excitation beam to pass through it by permeation. The second heat sink has a thermal conductivity greater than that of the saturable absorber and is configured to allow a laser beam to permeate therethrough (which means that the laser beam passes through it while retaining its intensity; this applies below). A first end coating is disposed between the first heat sink and the laser medium, and a second end coating is disposed between the saturable absorber and the second heat sink. A pulsed laser oscillator may be disposed between the first end coat and the second end coat.
In this pulsed laser device, the technique disclosed herein is applied between the first heat sink and the laser medium, and between the saturable absorber and the second heat sink. As a result, a layer of the same material, made of the same material as one of the first heat sink and the laser medium but having a different crystalline state, is interposed between the first end coat and one of the first sink. thermal and the laser medium. Namely, the layer similar to the first heat sink, consisting of the same material as the first heat sink but having a different crystalline state thereof, is interposed between the first end coating and the first heat sink, or the layer A laser-like medium, made of the same material as the laser medium but having a different crystalline state, is interposed between the first end coating and the laser medium. In addition, a second layer of the same material, made of the same material as one of the saturable absorber and the second heat sink but having a different crystalline state, is interposed between the second end coating and one of the saturable absorber and the second heat sink. Namely, the saturable absorber-like layer, made of the same material as the saturable absorber but having a different crystalline state therefrom, is interposed between the second end coating and the saturable absorber, or the layer similar to the second heat sink, consisting of the same material as the second heat sink but having a different crystalline state thereof, is interposed between the second end coating and the second heat sink.
According to the foregoing, it is possible to realize a pulsed laser device in which the thermal resistance between the laser medium and the first heat sink can be reduced to a low level, the thermal resistance between the saturable absorber and the second heat sink can be reduced to a low level, the generation of a high thermal stress can be suppressed in the laser medium that had been subjected to bonding, the generation of a high thermal stress can be suppressed in the saturable absorber which had been subjected to bonding. The heat from the laser medium is efficiently transmitted thermally to the first heat sink which is atomically joined to the laser medium, and is further thermally transmitted from the first heat sink. The laser medium is effectively cooled by the first heat sink. Similarly, heat from the saturable absorber is efficiently transmitted thermally to the second heat sink which is atomically joined to the saturable absorber, and is further thermally transmitted from the second heat sink. The saturable absorber is effectively cooled by the second heat sink. The heat generating units of the pulse laser device are efficiently cooled, and the power of the laser that the pulsed laser device is able to output is therefore increased.
(Laser device with multiple levels)
There are cases where a laser device linearly arranging a plurality of laser media is required. When the technique disclosed herein is applied to a multi-level laser device, the following configuration is obtained. The multi-level laser device includes a plurality of heat sinks and a plurality of laser media, and each of the heat sinks and each of the laser media are arranged alternately. Each of the laser media is configured to discharge a laser beam when an excitation beam enters the laser medium. Each of the heat sinks has a thermal conductivity greater than that of the laser medium, and is configured transparent to the excitation beam and the laser beam (the excitation beam and the laser beam pass through it while maintaining their intensities). The multi-level laser oscillator has a structure in which the laser media, the end coating, the heat sink-like layer and the heat sink are laminated, or a structure in which the heat sink, the end coating, the laser-like layer and the laser medium are laminated.
The multi-level laser device may be a multilevel laser oscillator. A solid material that receives an excitation beam and an input beam (seed light) and discharges an amplified beam of the input beam can be adopted as the laser medium above. By this, a multi-level laser amplifier can be formed.
In the above-mentioned multi-level laser device (i.e., a multilevel laser oscillator or multi-level laser amplifier), it is preferable that the luminescent atom density be lower for the laser medium located closer to the laser level. an end surface where the excitation beam enters the density of the luminescent atoms for the laser medium located closer to an end surface where the laser beam is discharged.
In this case, when one looks along the progression of the excitation beam, one can observe a relation in which the excitation beam passes through the laser medium having a low luminescent atom density (and therefore having a low absorption rate) in an area where the intensity of the excitation beam is still high because the absorption of the excitation beam has not yet occurred, and the excitation beam passes through the laser medium having a a high density of luminescent atoms (and therefore having a high absorption rate) in an area where the intensity of the excitation beam has dropped as a result of the absorption of the excitation beam. A combination of high intensity and low absorption rate in the first zone and a combination of low intensity and high absorption rate in the last zone have uniform values in multiplications for the respective combinations. When the luminescent atom density is low for the laser medium located near an end surface where the excitation beam enters, and the luminescent atom density is high for the laser medium located remote from the end surface where the excitation beam enters, the temperatures of the laser media arranged in multiple levels are standardized, and the maximum temperature among the laser media can be reduced.
(Laser device with multiple reflections excitation beam)
There are cases where the length of a laser medium (the length along an incident direction of the excitation beam) is short, and the laser medium can not sufficiently absorb the excitation beam. In the case of a thin plate-shaped laser medium with a short distance between the input surface of the excitation beam and the output surface of the laser beam, it can be posed as a problem that the laser medium can not sufficiently absorb the excitation beam. As a result, there is a known laser device having a reflection mechanism for reflecting the excitation beam which has entered the laser medium from the input surface of the excitation beam and is discharged to the laser beam. outside of the laser medium from the input surface of the excitation beam having been reflected on the output surface of the laser beam (which is called here excitation beam reflected in the laser medium, for the sake of simplicity of the description), so that the excitation beam is redirected towards the laser medium once more. In a conventional device, a thin plate-shaped laser medium is attached to a metal heat sink for cooling the laser medium. In the conventional device, it is necessary to avoid interference between the metal heat sink and the reflection mechanism of the excitation beam, which increases the length of the resonator of the laser oscillator. A technique for reducing the length of the resonator while allowing the use of the heat sink and the excitation beam reflection mechanism is currently required.
According to the technique disclosed herein, as an element through which the excitation beam passes through permeation can be used as a heat sink, the excitation beam, which has been reflected in the laser medium and passes through the transparent heat sink, can be reflected back through the transparent heat sink, and redirected towards the laser medium. As a result, an excitation beam reflection mechanism that is configured to reflect the excitation beam that passes through the heat sink after being reflected in the laser medium can be used to cause the excitation beam to be redirected. way through the heat sink towards the laser medium. As a result, the length of the resonator can be reduced.
Thus, the present disclosure relates to a method of manufacturing a laser device which comprises a laser medium having an end surface and configured to emit light when an excitation beam enters the laser medium, and a heat sink having a end surface and a thermal conductivity greater than that of the laser medium and configured to allow the excitation beam to pass therethrough by permeation, the end surface of the laser medium being joined to the end surface of the heat sink, the method comprising: forming an end coating on the end surface of one of the laser medium and the heat sink; forming a layer of the same material on one surface of the end coating, the layer of the same material being made of the same material as the material of the other of the laser medium and the heat sink; activating a surface of the layer of the same material and the end surface of the other of the laser medium and the heat sink in a substantially vacuum environment; and joining the activated surface of the layer of the same material and the activated end surface of the other of the laser medium and the heat sink in the substantially vacuum environment.
The present disclosure also relates to a laser device comprising: a laser medium having an end surface configured to emit light when an excitation beam enters the laser medium; a heat sink having an end surface and a thermal conductivity greater than that of the laser medium, configured to allow the excitation beam to pass therethrough by permeation, the end surface of the laser medium being joined to the end surface heat sink; an end coating disposed between the heat sink and the laser medium; and a layer of the same material interposed between the end coating and one of the heat sink and the laser medium, the layer of the same material being made of the same material as one of the heat sink and the laser medium, but having a different crystalline state.
In some embodiments, the laser device further comprises: a saturable absorber having an absorption capacity that is configured to be saturation when the intensity of light entering from the laser medium increases, and wherein the heat sink comprises a first heat sink having a thermal conductivity greater than that of the laser medium and configured to allow the excitation beam to pass therethrough by permeation, and a second heat sink having a thermal conductivity greater than that of the saturable absorber and configured to allowing the laser beam to permeate therethrough, ie the first heat sink, the laser medium, the saturable absorber and the second heat sink are arranged in this order, the second end surface of the first heat sink joins the first heat sink surface. end of the laser medium, the second end surface of the the laser center joins the first end surface of the saturable absorber, and the second end surface of the saturable absorber joins the first end surface of the second heat sink, the end coating comprises a first coating of end disposed between the first heat sink and the laser medium, and a second end coating disposed between the saturable absorber and the second heat sink, the layer of the same material comprises a first layer of the same material interposed between the first coating of end and one of the first heat sink and the laser medium, and a second layer of the same material interposed between the second end coating and one of the saturable absorber and the second heat sink, the first layer of the same material is made of the same material as one of the first heat sink and the laser medium but has a different crystalline state, and the second layer of the same material is made of the same material as one of the saturable absorber and the second heat sink but has a different crystalline state.
In some embodiments, the laser device comprises a plurality of heat sinks and a plurality of laser media, each of the heat sinks and each of the laser beams are arranged alternately, each of the laser media is configured to emit a laser beam when the excitation beam enters. and each of the heat sinks has a thermal conductivity greater than that of each of the laser media, and the excitation beam and the laser beam penetrate the heat sinks.
In some embodiments, each of the laser media is configured to receive the excitation beam and the input beam to discharge an amplified beam of the input beam.
In some embodiments, each of the laser media is configured to receive the excitation beam and the input beam to emit an output beam with amplified power of the input beam, the incident direction of the excitation beam, and the light emission direction of the laser beam are the same, and the incident direction of the excitation beam and the incident direction of the input beam are opposite.
In some embodiments, the density of the luminescent atoms in the laser medium intersecting an end surface or between the excitation beam is less than the density of the luminescent atoms in the laser medium located remote from said end surface.
In some embodiments, the laser device further comprises: an excitation beam reflection mechanism, wherein the excitation beam reflection mechanism is configured to reflect the excitation beam, which permeate through the dissipator thermal after being reflected in the laser beam, to direct the excitation beam so that it passes through the heat sink permeate towards the laser medium.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 is a side view of a pulsed laser device according to a first embodiment; Figure 2 is a partially exploded perspective view of the pulse laser device according to the first embodiment; Figure 3 shows a laser medium and a heat sink before an activation process; Figure 4 shows the laser medium and the heat sink during the activation process; Figure 5 shows the laser medium and the heat sink after the activation process; Figure 6 shows a state after the activated laser medium and the activated heat sink have been brought into contact; Figure 7 is a side view of a multi-level laser device according to a second embodiment; Figure 8 is a side view of a multiple reflection laser device according to a third embodiment; Fig. 9 is an optical path view of a multiple reflection excitation beam seen from the IX direction in Fig. 8; Fig. 10 is a side view of the optical paths of the multiple reflection excitation beam; Fig. 11 is a side view of a multiple reflection laser device according to a fourth embodiment; and Figure 12 is a side view of a multiple reflective laser device according to a fifth embodiment.
DETAILED DESCRIPTON
The technique disclosed herein achieves the following purpose (a), however the following embodiments further achieve the following goals (b) to (d). Each characteristic achieving the respective goal is independently useful. For example, one of the characteristics is useful even if it does not achieve goal (a), as long as it reaches goal (b). (a) To provide a technique for maintaining a low thermal resistance between a laser medium and a heat sink, and to avoid the action of a high thermal stress on the laser medium after bonding. (b) Providing a cooling technique suitable for a pulsed laser device. (c) Providing a cooling technique suitable for a multi-level laser device that linearly arranges a plurality of multi-level laser media. (d) Providing a technique for reducing the length of a resonator when using an excitation beam reflection mechanism that redirects a reflected excitation beam into the laser medium again towards the medium laser.
A laser device useful for obtaining the purpose (b) above may comprise the following configuration:
A first heat sink, a laser medium, a saturable absorber and a second heat sink are arranged in this order. A second end surface (the end surface of the laser middle side) of the first heat sink is joined to a first end surface (the end surface of the first heat sink side) of the laser medium, a second end surface (the end surface of the saturable absorber side) of the laser medium is joined to a first end surface (the end surface of the laser medium side) of the saturable absorber, and a second end surface (the end surface of the second heat sink side) of the saturable absorber is joined to a first end surface (the end surface of the saturable absorber side) of the second heat sink .
The laser medium emits light when an excitation beam enters it. The saturable absorber has an absorption capacity that is configured to be saturated when the intensity of light entering from the laser medium increases. The first heat sink has a thermal conductivity greater than that of the laser medium and is configured to allow the excitation beam to pass through by permeation. The second heat sink has a thermal conductivity greater than that of the saturable absorber and is configured to allow a laser beam to permeate therethrough.
A first end coating is disposed between the first heat sink and the laser medium. A second end coating is disposed between the saturable absorber and the second heat sink. A pulse laser oscillator is formed by the first end coating, the laser medium, the saturable absorber, and the second end coating.
According to this device, the heat from the laser medium is efficiently transmitted thermally to the first heat sink, and is further thermally transmitted from the first heat sink. The laser medium is effectively cooled by the first heat sink. The heat from the saturable absorber is efficiently transmitted thermally to the second heat sink, and is further thermally transmitted from the second heat sink. The saturable absorber is effectively cooled by the second heat sink. The heat generating portions of the pulse laser device are effectively cooled, and the laser power that the pulse laser device is able to output is therefore increased.
It is preferable that a first layer of the same material is interposed between the first end coating and one of the first heat sink and the laser medium, this first layer of the same material is made of the same material as the first one. one of the first heat sink and the laser medium, but having a different crystalline state therefrom, and a second layer of the same material is interposed between the second end coating and one of the saturable absorber and the second heat sink, said second layer of the same material being made of the same material as one of the saturable absorber and the second heat sink but having a different crystalline state therefrom; however, they are not mandatory.
A laser device useful for obtaining the purpose (c) above may comprise the following configuration:
A plurality of heat sinks and a plurality of laser media are present, and each of the heat sinks and each of the laser media are arranged alternately. Laser media are configured to emit a laser beam when an excitation beam enters them. The laser media may be configured to receive an excitation beam and an input beam and to discharge an amplified beam to the input beam. The heat sinks have a thermal conductivity greater than that of the laser media, and are configured to allow the excitation beam and the laser beam to pass through permeation. An end coating is disposed between respective pairs of the heat sink and the laser medium.
According to this arrangement, the heat sinks join the two end surfaces of each laser medium, so that each laser medium is effectively cooled from both of its end surfaces.
It is preferable to have a structure in which the laser medium, the end coating, the layer similar to the heat sink and the heat sink are laminated, or alternatively a structure in which the heat sink, the end coating, the laser-like layer and the laser medium are laminated, however this is not required.
A laser device useful for obtaining the purpose (d) above may comprise the following configuration:
A laser medium, a heat sink and a laser beam reflection mechanism are present, and an end surface (the end surface of the laser middle side) of the heat sink is joined to an end surface (the surface end of the heat sink side) of the laser medium. The laser medium emits light when an excitation beam enters it. The heat sink has a thermal conductivity greater than that of the laser medium, and is configured to allow the excitation beam to pass therethrough by permeation.
The reflection mechanism of the excitation beam reflects the excitation beam, which passes through the heat sink after being reflected in the laser medium, so that the excitation beam is redirected so as to pass through the heat sink towards the medium. laser.
It is preferable to have a structure in which the laser medium, the end coating, the layer similar to the heat sink and the heat sink are laminated, or alternatively a structure in which the heat sink, the end coating, the laser-like layer and the laser medium are laminated, however this is not required.
Embodiments [Embodiment First Embodiment: Pulse Laser Device]
Figure 1 shows a side view of a pulse laser device according to a first embodiment, and Figure 2 is a partially exploded perspective view thereof. The reference sign 2 indicates a first heat sink, the reference sign 8 indicates a laser medium, the reference sign 10 indicates a saturable absorber, and the reference sign 16 indicates a second heat sink. The laser medium 8 emits light when an excitation beam enters it via the first heat sink 2, and a pulsed laser beam is discharged through the second heat sink 16.
The reference sign 6 indicates a first end coating, having a low reflectance of the excitation beam and a high reflectance of the laser beam. Reference sign 12 indicates a second end coating, having an intermediate reflectance of the laser beam. That is, a portion of the laser beam is reflected therein and a second portion of the laser beam passes through it by permeation.
The laser medium 8 emits light when the excitation beam enters it. The saturable absorber 10 has an absorption capacity which is configured to be saturation when the intensity of light entering from the laser medium 8 increases, and becomes transparent ie, the saturable absorber 10 becomes transparent when the intensity of the laser beam trapped between the first end coating 6 and the second end coating 12 becomes high, and functions as a passive Q switch. The pulsed laser beam is discharged through the second heat sink 16.
Figure 2 shows a partially exploded view of the pulse laser device. The first end coating 6 is disposed on an end surface (the end surface of the side of the first heat sink 2) of the laser medium 8, and a layer 4 made of the same material as the first heat sink 2 (which hereinafter is a layer similar to the first heat sink 4) is disposed on a surface of the first end coating 6. Similarly, a second end layer 12 is disposed on an end surface (the surface of end of the side of the second heat sink 16) of the saturable absorber 10, and a layer 14 made of the same material as the second heat sink 16 (hereinafter referred to as a layer similar to the second heat sink 14) is disposed on a surface the second end coating 12.
In this embodiment, a YAG containing 1.1 atomic% Nd is used as the laser medium 8. The laser medium 8 has a disc shape with a diameter of 5 mm and a thickness of 4 mm. A YAG containing Cr 2 O 3 is used for the saturable absorber 10. A light of 808 nm is used as the excitation beam, thereby obtaining a pulsed laser beam of 1064 nm. that Cr-YAG can be used as saturable absorber 10. It can be a nonlinear optical element such as LBO or a crystal.
In the present embodiment, the first end coating 6 and the second end coating 12 are formed by coating as multilayer dielectric film coatings. The first heat sink 2 allows an 808 nm excitation beam to pass therethrough by permeation, and a sapphire substrate is used in the present embodiment. The second heat sink 16 allows a 1064 nm laser beam to pass therethrough by permeation, and a sapphire substrate is used in the present embodiment.
[0032] It is difficult to keep the thermal resistance between multilayer dielectric films (first end coating 6 and second end coating 12) and sapphire substrates at a low value, while preventing a high thermal stress. acting on the laser medium 8. A method of keeping the multilayer dielectric films and the sapphire substrates in contact by means of a mechanical force does not make it possible to obtain sufficient contact surfaces, and the thermal resistance can not be scaled down. According to a method of adhering them together by means of an adhesive such as an epoxy, the layer of such an adhesive will increase the thermal resistance. When the multilayer dielectric films and sapphire substrates are diffusion bonded, the thermal resistance will be reduced, however a high thermal stress acts on the laser medium 8. In the present embodiment, in an attempt to avoid the above-mentioned circumstances, the laser medium 8, on an end surface on which is disposed a multilayer dielectric film (the first end coating 6), and a sapphire substrate (the first heat sink 2) are adhesively bonded at room temperature. In addition, the saturable absorber 10 on an end surface of which is disposed a multilayer dielectric film (the second end coating 12), and a sapphire substrate (the second heat sink 16) are adhesively bonded at room temperature .
The reference sign 4 in FIG. 2 indicates a film of alumina deposited on a surface of the first end coating (the multilayer dielectric film) 6, and it is a film made of the same material as the first heat sink (the sapphire) 2. The reference sign 14 indicates a film of alumina deposited on a surface of the second end coating (the multilayer dielectric film) 12, and it is a film consisting of same material as the second heat sink (the sapphire) 16. The first heat sink (sapphire) 2 and the alumina film 4 made of the same material must be firmly joined during bonding at room temperature which will be described later. Similarly, the second heat sink (sapphire) 16 and the alumina film 14 made of the same material must be firmly joined during bonding at room temperature which will be described later.
3 shows a surface of the laser medium 8 (to be more precise, a surface 4a of the alumina film 4), on the end surface of which is disposed the first end coating (the multilayer dielectric film). ) 6, and the film 4 of the same material (alumina) as the first heat sink 2 is disposed on a surface of the first end coating (the multilayer dielectric film) 6. Figure 3 also shows a surface 2a of the first heat sink (Sapphire) 2. When these surfaces are exposed to air, contaminating atoms such as oxygen and the like bind to the surfaces 4a, 2a and thus the alumina film 4 and the sapphire substrate 2 do not will not be joined even if they are put in contact.
Figure 4 shows a state in which the alumina film 4 and the sapphire substrate 2 are placed in a substantially vacuum environment, and an ion beam 20 such as Ar is irradiated on their surfaces. When the ion beam 20 is irradiated onto the surfaces, the oxygen or the like adhered to the surfaces 4a, 2a is removed, and newly formed surfaces, including pendant links, are formed. Figure 5 shows the surface 4a of the alumina film 4 and the surface 2a of the sapphire substrate 2 where the newly formed surfaces are formed, and atomic bonds (dangling bonds) 22 are exposed on the surfaces. FIG. 6 shows a state in which the alumina film 4 and the sapphire substrate 2, on the surfaces of which the atomic bonds are exposed, are brought into contact and, in this state, an interatomic mutual binding force is generated between the alumina film 4 and the sapphire substrate 2, as a result of which the alumina film 4 and the sapphire substrate 2 are firmly bonded. The thermal resistance between the alumina film 4 and the sapphire substrate 2 is low. In addition, since the alumina film 4 and the sapphire substrate 2 are bonded at ambient temperature, no significant thermal stress will act on the laser medium 8. In addition, the transparency at a junction interface of the film of alumina 4 and sapphire substrate 2 is extremely high, and neither blur nor color can be observed. In the present embodiment, the presence of the first end coating 6 which has been deposited in the vapor phase on the surface of the laser medium 8 allows the thermal resistance between them to be low, the presence of the layer 4 consisting of same material as the first heat sink 2 which has been deposited in the gas phase on the surface of the first end coating 6 allows the thermal resistance between them to be low, and the first heat sink 2 which has been bonded at room temperature on the surface of the layer 4 made of the same material as the first heat sink 2 allows the thermal resistance between them to be low. In the present embodiment, the thermal resistance between the laser medium 8 and the first heat sink 2 is low. The layer similar to the first heat sink 4 is a layer made of the same material as the first heat sink 2, but has a different crystalline state.
The same applies to the relationship between the saturable absorber 10, the second end coating 12, the layer similar to the second heat sink 14, and the second heat sink 16, and thus the layer similar to the second heat sink 14 and the second heat sink 16 are glued at room temperature. In the present embodiment, the thermal resistance between the saturable absorber 10 and the second heat sink 16 is low, and there is no high thermal stress acting on the saturable absorber 10. The transparency at the level of the The interface between the saturable absorber and the heat sink is extremely high, and neither blur nor coloration can be observed.
It should be noted that the laser medium 8 and the saturable absorber 10 can be glued at room temperature. If the laser medium 8 and the saturable absorber 10 are both YAG but differ only in the dopants, this means that they are layers of the same material, and therefore they can be glued at room temperature while the step to form a layer of the same material is skipped. Further, as shown in Figure 11, an end coating 30 may be interposed between the laser medium 28 and the saturable absorber 10. The end layer 30 is a film having a high reflectance to the excitation beam, and a low reflectance vis-à-vis the laser beam. When the end coating 30 is formed on a laser medium 28, a saturable absorber-like layer is formed on a surface thereof to bond the saturable absorber 10 by means of ambient temperature bonding. When the end coating 30 is formed on the saturable absorber 10, a laser-like layer is formed on a surface thereof for bonding it to the laser medium 28 by means of room temperature bonding.
It should be noted that the first heat sink 2 and the second heat sink 16 are preferably connected directly or indirectly to a heat diffuser device which is not shown.
As shown in FIGS. 1 and 2, in the present embodiment, the first endcoat 6 and the analogous layer at the first heat sink 4 are formed on the end surface of the laser medium 8, and this laminate is bonded at ambient temperature to the first heat sink 2. Alternatively, the first end coating 6 and a laser-like layer may be formed on the end surface of the first heat sink 2, and this laminate may be bonded at ambient temperature in the laser medium 8. In the latter case, the laser-like layer is formed between the first end coating 6 and the laser medium 8. The laser-like layer is made of the same material as the laser medium 8, but it has a different crystalline state. Similarly, the second end coating 12 and a saturable absorber-like layer may be formed on the end surface of the second heat sink 16, and this laminate may be bonded at room temperature to the saturable absorber 10 In the latter case, the saturable absorber-like layer is formed between the second end coating 12 and the saturable absorber 10. The saturable absorber-like layer is made of the same material as the saturable absorber 10 but it has a different crystalline state.
(Second embodiment: multi-level laser device)
Figure 7 shows a multi-level laser device according to a second embodiment, which is a multi-level laser amplifier that linearly aligns a plurality of multi-level laser media 8. Each of the laser media 8 emits light when an excitation beam and an input beam (seed light) enter it, and an amplified laser beam of the input beam is output. Films 6 and 12 adjusted to an intermediate reflectance with respect to the laser beam are arranged on the two surfaces of each laser medium 8.
A heat sink 2 is inserted between each pair of adjacent laser media 8, 8. The heat sinks 2 have a thermal conductivity greater than that of the laser media 8, and are configured to allow the excitation beam, the input beam and the to the laser beam to pass through permeation.
The reference signs 4 and 14 indicate layers similar to the heat sink interposed between the heat sinks 2 and those among the respective end coatings 6, 12, and the presence of these layers of the same material allows the heat sinks 2 and the media laser 8 to be joined by gluing at room temperature. The reference sign 24 is a λ / 4 plate. The λ / 4 plate 24 may be arranged at the right end of Figure 7, or may be omitted. In the case of a single path amplifier, the λ / 4 plate 24 is not required. In addition, a Faraday rotator can be used in place of the λ / 4 plate 24.
The heat sinks 2 have a larger diameter than the laser medium 8. The device of Figure 7 is used while being housed in a metal cylinder which is not shown. A relationship is thus obtained in which the outer circumferential surfaces of the heat sink 2 make contact with the inner circumference of the metal cylinder. The heat from the laser media 8 is effectively cooled by being thermally transmitted to the metal cylinder via the heat sinks 2.
In Figure 7, although the excitation beam enters from the left end surface, it may enter from both left and right surfaces. The input beam can enter from either of the left and right end surfaces.
There is a case in which the outermost surface of each end coating is of the same material as the heat sinks. For example, there are cases in which the outermost surfaces of the end coatings are alumina, and the heat sinks are sapphire. Alternatively, there are cases where the outermost surfaces of the end coatings are YAG, and the heat sinks are also YAG. YAG can have various properties depending on the types and amounts of dopants, and therefore it can be used for end coatings as well as for heat sinks. In this case, the outermost surfaces of the end coatings may serve as layers of the same material.
A solid material that emits light when an excitation beam enters it can be used for each of the laser media 8 shown in Figure 7. In this case, a multi-level laser oscillator is obtained.
(Third embodiment: laser device with multiple reflections excitation beam)
Figure 8 shows a laser device according to a third embodiment, and the excitation beam reflected in the laser medium 28 is reflected again to re-enter the laser medium 28. The laser medium 28 is thin (its distance the along the direction of average progression of the excitation beam (x-axis) is short) and, thus, the excitation beam is not sufficiently absorbed by a simple back-and-forth within the laser medium 28 just once, and so the excitation beam is reflected in multiple paths.
The reference sign 2 indicates the heat sink, which is transparent vis-à-vis an excitation beam of 808 nm. Reference sign 4 indicates the heat sink-like layer, 6 indicates the first end coat, 28 indicates the laser medium (which is thinner than the laser medium 2 of the first and second embodiments), 30 indicates the second end coating, and 32 indicates an output coupler.
The first end coating 6 has a low reflectance to the excitation beam, and a high reflectance to the laser beam. The second end coating 30 has a high reflectance to the excitation beam, and a low reflectance to the laser beam.
As shown in Figure 8, the excitation beam passes through the heat sink 2 through which the excitation beam can pass through permeation, the layer similar to the heat sink 4 through which the excitation beam can pass. by permeation, and the first end coating 6 through which the excitation beam may permeate, and enters the laser medium 28. The excitation beam which has progressed within the laser medium 28 is reflected by the second end coating 30, and progresses within the laser medium 28 to the left. The excitation beam which has progressed inside the laser medium 28 to the left passes through the first end coating 6 to exit the laser medium 28, and progresses further to the left inside the heat sink 2. Laser medium 28 is thin, so that the excitation beam can not be sufficiently absorbed into the laser medium 28 by simply back-and-forth within the laser medium 28 just once. The excitation beam "b" progressing to the left from the heat sink 2 can still be used. Thus, in the present embodiment, an excitation beam reflection mechanism is used to redirect the excitation beam "b" back towards the laser medium 28.
Fig. 9 shows an observation of optical paths of the excitation beam which repeatedly passes through the heat sink 2 by means of the excitation beam reflection mechanism, as seen from the direction IX in Fig. 8 .
The numbers indicated in circles show points of reflection of the excitation beam by the excitation beam reflection mechanism. The numbers indicate the order of the positions of reflection. The letter "a" in FIG. 9 shows the excitation beam obtained from a light-emitting diode which is not shown, and the other letters show the optical paths of the excitation beam reflected at the level of the laser medium. or the reflection points of the excitation beam reflection mechanism. For example, the excitation beam "a" is reflected on the laser medium 28 and progresses along the optical path "b", is reflected at the reflection point 2 and progresses along the optical path "c", is reflected at the reflection point 3 and progresses along the optical path "d", is reflected at the laser medium 28 and progresses along the optical path "e", and is reflected at the reflection point 4 and progresses along the optical path "f".
Figure 10 is an observation in side view of the optical paths of the excitation beam which repeatedly passes through the heat sink 2 by the excitation beam reflection mechanism. However, (A) in Figure 10 shows the optical paths in the AA plane of Figure 9, and (B) in Figure 10 shows the optical paths in the BB plane of Figure 9. In the case of Figure 8 , the optical path "b" shows the optical paths in the plane AA, and the optical path "d" shows an overlap of the optical paths in the plane BB.
As is evident from FIGS. 9 and 10, in the present embodiment, the excitation beam arrives in the laser medium 28 six times (optical paths a, d, g, j, m , p) by the excitation beam reflection mechanism. Although the laser medium 28 is thin, the excitation beam is absorbed in the required amount as it moves back and forth therein, and a laser beam having the required intensity is discharged.
In the conventional laser device having an excitation beam reflection mechanism, the heat sink 2 is made of metal, and therefore the excitation beam does not cross it. Thus, the excitation beam reflection mechanism is arranged on the right side of the laser medium 28 of FIG. 8. As a result, it is necessary to avoid interference between the output coupler 32 and the reflection mechanism of FIG. excitation beam, and thus the distance between the output coupler 32 and the laser medium 28 can not be reduced. The distance between the output coupler 32 and the laser medium 28 affects the length of the resonator of a laser oscillator. If the length of the resonator is large, it becomes difficult to reduce the pulse time for the pulse laser and to increase the peak power, for example. According to the present embodiment, the excitation beam reflection mechanism can be arranged on the left side of the laser medium 28 of Fig. 8, and the distance between the output coupler 32 and the laser medium 28 can be freely selected. The pulse time for the pulse laser can be reduced and the peak power can be increased.
(Fourth embodiment)
The embodiment of Fig. 11 is a multi-reflective pulse laser device of the excitation beam, having both the excitation beam reflection mechanism of Figs. 8 to 10 and the switch Q of Fig. 1. Repetition of explanations on topics that have already been explained will be omitted. In the present embodiment, the end coating 30 is interposed between the laser medium 28 and the saturable absorber 10. A layer having a high reflectance with respect to the excitation beam and a low reflectance vis-à-vis the The laser beam is used as the end coating 30. In addition, the laser medium 28 and the saturable absorber 10 can be glued at room temperature. In this case, the end coating 30 is deposited in the vapor phase on one of the laser medium 28 and the saturable absorber 10, a layer made of the same material as the other among the laser medium 28 and the absorber saturable 10 is vapor deposited on a surface of the end coating 30, and the laser medium 28 and the saturable absorber 10 are thus bonded at room temperature. As a result, a layer of the same material as the laser medium 28 is formed between the end coating 30 and the laser medium 28 or, alternatively, a layer of the same material as the saturable absorber 10 is formed between the coating terminal 30 and the saturable absorber 10.
[Fifth Embodiment]
The embodiment of Fig. 12 is provided with the excitation beam reflection mechanism of Figs. 8 to 10, and has a film 34 which is disposed at the end surface of the laser medium 8 and serves as a coating. end as well as output coupler. Because of this, the configuration of the laser device that discharges a continuous laser beam can be simplified. In the case of Figure 12, a heat sink not shown can be joined to the end surface of the right side of the film 34. The laser medium 28 can thus be cooled from its two end surfaces. .
The inventors have studied techniques for high efficiencies of a laser device, and have managed to achieve a laser beam intensity of 50 GW / cm 2 or more. With such a high intensity, the condition of contact between the laser medium and the heat sink is very important. Various known bonding techniques present problems when increasing the output power of the laser beam. According to known bonding techniques, the laser medium is not effectively cooled by the heat sink, a high thermal stress develops inside the laser medium, or a blur or coloration is generated at the level of the laser. junction interface of the laser medium and the heat sink. High transparency at the junction interface is critical to increasing the power of the laser, since a blur or dye at the interface absorbs a portion of the laser beam and generates heat at the interface . The amount of energy absorbed will be very high when the intensity of the laser beam is 50 GW / cm 2 or more, even if the blur or coloring is light and the absorption rate is low. The present disclosure teaches a means for overcoming problems preventing the increase of laser power.
Although specific examples of the present invention have been described in detail above, these examples are merely illustrative and do not place any limitation on the scope of the patent claims. The technology described in the patent claims also encompasses various changes and modifications to the specific examples described above. The technical elements explained in the present description or the drawings provide technical utility either independently or through various combinations. The present invention is not limited to the combinations described at the time of filing the claims. In addition, the purpose of the examples illustrated by the present description or the drawings is to simultaneously satisfy multiple objectives, and the satisfaction of any of these objectives gives a technical utility to the present invention.

权利要求:
Claims (8)
[1" id="c-fr-0001]
REVENDICATONS
A method of manufacturing a laser device which comprises a laser medium (8; 28) having an end surface and configured to emit light when an excitation beam enters the laser medium (8; 28), and a heat sink (2) having an end surface (2a) and a thermal conductivity greater than that of the laser medium (8; 28) and configured to allow the excitation beam to pass therethrough by permeation, the end surface laser medium (8; 28) being joined to the end surface of the heat sink (2), the method comprising: forming an end coating (6) on the end surface of one of the laser medium (8; 28) and the heat sink (2); forming a layer of the same material (4) on one surface of the end coating (6), the layer of the same material (4) being made of the same material as the material of the other one of the laser medium (8). 28) and the heat sink (2); activating a surface (4a) of the layer of the same material (4) and the end surface (2a) of the other of the laser medium (8; 28) and the heat sink (2) in a substantially vacuum environment; and joining the activated surface of the layer of the same material (4) and the activated end surface of the other one of the laser medium (8; 28) and the heat sink (2) in the environment substantially under empty.
[2" id="c-fr-0002]
A laser device comprising: a laser medium (8; 28) having an end surface configured to emit light when an excitation beam enters the laser medium; a heat sink (2) having an end surface (2a) and a thermal conductivity greater than that of the laser medium, configured to allow the excitation beam to pass therethrough by permeation, the end surface of the laser medium (8 28) being joined to the end surface (2a) of the heat sink (2); an end coating (6) disposed between the heat sink (2) and the laser medium (8; 28); and a layer of the same material (4) interposed between the end coating (6) and one of the heat sink (2) and the laser medium (8; 28), the layer of the same material (4) being constituted of the same material as one of the heat sink (2) and the laser medium (8; 28), but having a different crystalline state.
[3" id="c-fr-0003]
The laser device of claim 2, further comprising: a saturable absorber (10) having an absorption capacity that is configured to be saturated when the intensity of light entering from the laser medium (8; 28) increases, and wherein the heat sink (2, 16) comprises a first heat sink (2) having a higher thermal conductivity than the laser medium (8; 28) and configured to allow the excitation beam to pass therethrough by permeation and a second heat sink (16) having a thermal conductivity greater than that of the saturable absorber (10) and configured to allow the laser beam to permeate therethrough, the first heat sink (2), the laser medium (8). 28), the saturable absorber (10) and the second heat sink (16) are arranged in this order, the second end surface of the first heat sink (2) is joined to the first surface end of the laser medium (8; 28), the second end surface of the laser medium (8; 28) is joined to the first end surface of the saturable absorber (10), and the second end surface of the saturable absorber (10). is joined to the first end surface of the second heat sink (16), the end coating (6, 12) comprises a first end coating (6) disposed between the first heat sink (2) and the laser medium (8; 28), and a second end coating (12) disposed between the saturable absorber (10) and the second heat sink (16), the layer of the same material (4, 14) comprises a first layer (4). ) of the same material interposed between the first end coating (6) and one of the first heat sink (2) and the laser medium (8; 28), and a second layer (14) of the same material interposed between the second end coating (12) and one of the saturable absorber (10) and the second heat sink (16), the first layer of the same material (4) is made of the same material as one of the first heat sink (2) and the laser medium (8; 28) but has a different crystalline state, and the second layer of the same material (14) is made of the same material as one of the saturable absorber (10) and the second heat sink (16) but has a different crystalline state .
[4" id="c-fr-0004]
A laser device according to claim 2, wherein the laser device comprises a plurality of heat sinks (2) and a plurality of laser media (8), each of the heat sinks (2) and each of the laser media (8) are arranged alternately, each laser medium (8) is configured to emit a laser beam when the excitation beam enters, and each of the heat sinks (2) has a thermal conductivity greater than that of each of the laser media (8), and the beam of excitation and the laser beam penetrate the heat sinks (2).
[5" id="c-fr-0005]
The laser device of claim 4, wherein each of the laser media (8) is configured to receive the excitation beam and the input beam to discharge an amplified beam of the input beam.
[6" id="c-fr-0006]
The laser device according to claim 5, wherein each of the laser media (8) is configured to receive the excitation beam and the input beam to emit an output beam with an amplified power of the input beam, the incident direction of the excitation beam and the light emission direction of the laser beam are the same, and the incident direction of the excitation beam and the incident direction of the input beam are opposite.
[7" id="c-fr-0007]
The laser device according to claim 4, wherein the density of the luminescent atoms in the laser medium (8) crossing an end surface or between the excitation beam is less than the density of the luminescent atoms in the laser medium (8). ) located at a distance from said end surface.
[8" id="c-fr-0008]
The laser device of claim 2, further comprising: an excitation beam reflection mechanism, wherein the excitation beam reflection mechanism is configured to reflect the excitation beam, which permeate through the dissipator after being reflected in the laser beam, to direct the excitation beam so that it passes permeationally through the heat sink towards the laser medium (28).

类似技术:

公开号 | 公开日 | 专利标题

FR3052603A1|2017-12-15|LASER DEVICE AND METHOD FOR MANUFACTURING SAME

EP0377207B1|1994-05-18|Rod laser optically pumped by a source with a narrow emitting surface

EP0742614B1|2001-09-19|Microlaser pumped monolithic optical parametric oscillator

EP0432009A1|1991-06-12|Miniature optical source and producing process

Nishikawa et al.1997|X-ray generation enhancement from a laser-produced plasma with a porous silicon target

FR2758915A1|1998-07-31|SOLID MICROLASER PASSIVELY DISRUPTED BY SATURABLE ABSORBENT AND METHOD FOR MANUFACTURING THE SAME

FR2734094A1|1996-11-15|MONOLITHIC INFRARED SEMICONDUCTOR TRANSMITTER PUMP USING SOLID MICROLASER TRIGGERED

FR3058584A1|2018-05-11|LASER COMPONENT

FR2734096A1|1996-11-15|CAVITE MICROLASER AND IMPULSIVE SOLID IMPULSIVE MICROLASER WITH PASSIVE TRIPPING AND EXTERNAL CONTROL

FR2661784A1|1991-11-08|POWER LASER WITH ACTIVE MIRROR.

EP0724315B1|1998-08-26|Microlaser cavity and its manufacturing method

EP1717914A1|2006-11-02|Active element for laser source and laser source comprising such active element

FR3045965A1|2017-06-23|CONCENTRATED LIGHT EMITTING MODULE AND LASER DEVICE USING SUCH A MODULE

FR2859820A1|2005-03-18|Modification of characteristic of one zone in a multizone material uses thermal effect produced by laser beam

WO2006063901A1|2006-06-22|Device for amplifying a laser with high energy and high beam quality

FR2736217A1|1997-01-03|MICROLASER CAVITY AND IMPULSIVE SOLID MICROLASER WITH ACTIVE MICRO-MODULATOR TRIP

FR2895841A1|2007-07-06|Laser device has amplifier medium for transmitting laser beam of intermediate wavelength for pumping three level amplifier medium, where amplifier media are provided inside laser cavity

EP2700131B1|2017-09-06|Device for managing heat in an optical element, and related heat-management method

WO2005036703A1|2005-04-21|Laser diode-pumped monolithic solid state laser device and method for application of said device

FR2885267A1|2006-11-03|Active element for laser source, has different crystals presenting low doping at upstream face of elongated core, and absorption unit arranged in core periphery for absorbing any radiation presenting wavelength of laser radiation

EP1745531B1|2009-04-08|Inclined pump beam radiation emitter

FR2885743A1|2006-11-17|Optical pumping device for amplifying laser beam, has optic gain zone with volume and positioning in layer that are adjustable based on cross-section of pumped beam and to angle of incidence, by utilizing incoming spot

EP2596555A1|2013-05-29|Device for amplifying a laser beam with supression of transverse lasing

FR2681738A1|1993-03-26|SEMICONDUCTOR FILTER POWER LASERS.

EP0767519A1|1997-04-09|Device for optical amplification

同族专利:

公开号 | 公开日

US20170358898A1|2017-12-14|

DE102017112620A1|2017-12-14|

CN107492779A|2017-12-19|

JP2017220652A|2017-12-14|

KR20170140100A|2017-12-20|

引用文献:

公开号 | 申请日 | 公开日 | 申请人 | 专利标题

US5796766A|1994-08-23|1998-08-18|Laser Power Corporation|Optically transparent heat sink for longitudinally cooling an element in a laser|

JP2000101175A|1998-09-18|2000-04-07|Mitsubishi Electric Corp|Solid-state passive q-switch block, solid-state q-switch laser oscillator, and solid-state laser device|

US6624925B2|2001-03-13|2003-09-23|Textron Systems Corporation|Optical amplifier employing an active doped unitary amplifier|

US20050074040A1|2003-10-03|2005-04-07|Spence David E.|Diamond cooled laser gain assembly|

JP4933130B2|2006-02-16|2012-05-16|昭和電工株式会社|GaN-based semiconductor light-emitting device and manufacturing method thereof|

JP4294661B2|2006-07-26|2009-07-15|国立大学法人東北大学|Substrate stage, heat treatment apparatus, and substrate stage manufacturing method|

US7649920B2|2007-04-03|2010-01-19|Topcon Corporation|Q-switched microlaser apparatus and method for use|

US7924895B2|2007-05-23|2011-04-12|Bae Systems Information And Electronic Systems Integration Inc.|Monolithic diode-pumped laser cavity|

US7724800B2|2007-06-08|2010-05-25|The Boeing Company|Power scaleable thin disk lasers|

JP2010251390A|2009-04-13|2010-11-04|Oki Electric Ind Co Ltd|Light emitting diode and method of fabrication thereof|

WO2010145855A1|2009-06-15|2010-12-23|Pantec Biosolutions Ag|Monolithic, side pumped solid-state laser and method for operating the same|

US8379680B1|2009-08-10|2013-02-19|The Boeing Company|Direct cooling of thin disk lasers|

RU2528604C2|2010-04-08|2014-09-20|Нития Корпорейшн|Light emitting device and method of its manufacturing|

JP5868003B2|2011-01-14|2016-02-24|三菱電機株式会社|Planar waveguide laser device and manufacturing method thereof|

US9287351B2|2011-06-30|2016-03-15|Kyocera Corporation|Composite substrate and method for manufacturing same|

US8518179B1|2012-02-29|2013-08-27|Uchicago Argonne, Llc|Controlling the emissive properties of materials-improved lasers and upconversion materials|

US20130250984A1|2012-03-22|2013-09-26|Ams Research Corporation|Laser element having a thermally conductive jacket|

JP2014135421A|2013-01-11|2014-07-24|Hamamatsu Photonics Kk|Solid state laser device and manufacturing method therefor|

ES2886515T3|2013-11-28|2021-12-20|Candela Corp|laser system|

WO2015097869A1|2013-12-27|2015-07-02|三菱電機株式会社|Flat waveguide-type laser device|

JP2016018071A|2014-07-08|2016-02-01|住友金属鉱山株式会社|Faraday rotator, and manufacturing method of the same|

US9337614B1|2014-10-22|2016-05-10|Trumpf Laser Gmbh|Cooling disk lasers|

US9401580B1|2015-05-27|2016-07-26|Lumentum Switzerland Ag|Optical source with passive pulse shaping|

DE102016118364B3|2016-09-28|2018-03-08|Schott Ag|Cladding glass for solid-state lasers|JP6261057B1|2016-09-07|2018-01-17|大学共同利用機関法人自然科学研究機構|Selective amplification device|

JP6632644B2|2018-01-25|2020-01-22|大学共同利用機関法人自然科学研究機構|Method for manufacturing optical element and optical element|

JP6933349B2|2018-04-25|2021-09-08|国立大学法人北見工業大学|Manufacturing method of joints, laser oscillators, laser amplifiers and joints|

US10622780B2|2018-06-22|2020-04-14|Candela Corporation|Handpiece with a microchip laser|

US20220029377A1|2018-12-25|2022-01-27|Sony Group Corporation|Laser device|

WO2020255880A1|2019-06-18|2020-12-24|大学共同利用機関法人自然科学研究機構|Method for manufacturing optical element and optical element|

CN111431019A|2020-02-24|2020-07-17|中国科学院光电研究院|Double-sided conduction cooling multi-slice laser head|

法律状态:
2018-04-24| PLFP| Fee payment|Year of fee payment: 2 |

2019-04-10| PLFP| Fee payment|Year of fee payment: 3 |

2020-05-08| RX| Complete rejection|Effective date: 20200327 |

优先权:

申请号 | 申请日 | 专利标题

JP2016116603A|JP2017220652A|2016-06-10|2016-06-10|Laser device and manufacturing method thereof|

[返回顶部]